NEW NEGATIVE TONE RESISTS FOR SUB-QUARTER MICRON LITHOGRAPHY

被引：6
|
作者：
SACHDEV, H
KWONG, R
HUANG, W
KATNANI, A
SACHDEV, K
机构：
[1] IBM Microelectronic Division, Bldg. 300-40E Hopewell Junction
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期
关键词：
Bishydro pyran derivative - Dihyropyranyl group - Matrix resin - Negative tone resist system - Photoacid generators - Sulfonyloxy triflate - Tetrahydropyranyl ether group - Triphenyl sulfonium triflate;
D O I：
10.1016/0167-9317(94)00131-D
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new acid amplified negative tone resist system is described which utilizes the formation of tetrahydropyranyl ether group for the crosslinking reaction. In a three component system, the phenolic groups of the matrix resin add to the dihydropyranyl groups of the crosslinker in the imaged areas. N-sulfonyloxy triflate or triphenyl sulfonium triflate are used as photoacid generators. The resist has excellent sensitivity to DUV, E-Beam, and X-Ray and is also used for positive tone surface imaging.
引用
收藏
页码：393 / 396
页数：4
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