A MILD ELECTROCHEMICAL SULFUR PASSIVATION METHOD FOR GAAS(100) SURFACES

被引：26

作者：

LI, ZS ^{[1
]}

HOU, XY ^{[1
]}

CAL, WZ ^{[1
]}

WANG, W ^{[1
]}

DING, XM ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. (C) 1995 American Institute of Physics.

引用

页码：2764 / 2766

页数：3

共 50 条

[21] SULFUR PASSIVATION OF GALLIUM ANTIMONIDE SURFACES
DUTTA, PS
SANGUNNI, KS
BHAT, HL
KUMAR, V
APPLIED PHYSICS LETTERS, 1994, 65 (13) : 1695 - 1697
[22] A new method to enhance the magnetism of Fe overlayer on GaAs(100):: Sulfur passivation using CH3CSNH2
Xu, PS
Guo, HZ
Zhang, FP
Lu, ED
Xu, FQ
Pan, HB
Zhang, XY
ACTA PHYSICA SINICA-OVERSEAS EDITION, 1999, 8 (11): : 853 - 859
[23] SULFUR PASSIVATION OF GAAS-SURFACES - A MODEL FOR REDUCED SURFACE RECOMBINATION WITHOUT BAND FLATTENING
SPINDT, CJ
SPICER, WE
APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1653 - 1655
[24] ELECTRONIC PASSIVATION OF GAAS-SURFACES BY ELECTRODEPOSITION OF ORGANIC-MOLECULES CONTAINING REACTIVE SULFUR
ASAI, K
MIYASHITA, T
ISHIGURE, K
FUKATSU, S
JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1582 - 1586
[25] Passivation of GaAs surface by sulfur glow discharge
Hou, XY
Chen, XY
Li, ZS
Ding, XM
Wang, X
APPLIED PHYSICS LETTERS, 1996, 69 (10) : 1429 - 1431
[26] Passivation of GaAs surface by sulfur glow discharge
Appl Phys Lett, 10 (1429):
[27] ABINITIO STUDY OF GAAS SURFACE PASSIVATION BY SULFUR
GAYEN, S
ERMLER, WC
SANDROFF, CJ
JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (19): : 7357 - 7361
[28] Oxygen and sulfur adsorption effects on electronic states of GaAs(100) surfaces studied with discrete variational Xα method
Miyamura, S
Kasai, Y
Yamamura, Y
Inokuma, T
Iiyama, K
Takamiya, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (12): : 7244 - 7249
[29] HREELS analysis of band bending on sulfur-covered GaAs(100) surfaces
Technical Univ of Berlin, Berlin, Germany
Surf Sci, (740-744):
[30] Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM
Ke, Y
Milano, S
Wang, XW
Tao, N
Darici, Y
SURFACE SCIENCE, 1998, 415 (1-2) : 29 - 36

← 1 2 3 4 5 →