SILICON-ON-INSULATOR OPTICAL RIB WAVE-GUIDE LOSS AND MODE CHARACTERISTICS

被引：136
作者：
RICKMAN, AG
REED, GT
NAMAVAR, F
机构：
[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
[2] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND
[3] SPIRE CORP, DIV THIN FILMS, BEDFORD, MA 01730 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1994年 / 12卷 / 10期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/50.337489
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical rib waveguides with rib heights of 3.17 and 7.67 microns with various widths have been formed in separation by implantation of oxygen (SIMOX) based silicon-on-insulator (SOI) structures. The effect of waveguide rib etch depth, width, and interface roughness on loss and mode characteristics have been studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single mode SOI waveguides even though planar SOI waveguides of similar multimicron dimension are not single mode. Mode loss was found to be strongly dependent on interface roughness and mode confinement.
引用
收藏
页码：1771 / 1776
页数：6
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