EFFECTS OF ELECTRON AND HOLE TRAPPING ON RADIATION HARDNESS OF AL2O3 MIS DEVICES

被引：11

作者：

HARARI, E ^{[1
]}

ROYCE, BSH ^{[1
]}

机构：

[1] PRINCETON UNIV,SOLID STATE & MAT LAB,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1109/TNS.1973.4327408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：280 / 287

页数：8

共 13 条

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[2] DOUGLAS FC, 1969, THESIS U CONNECTICUT
[3] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
BROWN, DM
[J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &
[4] TRAP STRUCTURE OF PYROLYTIC AL2O3 IN MOS CAPACITORS
HARARI, E
ROYCE, BSH
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (03) : 106 - 107
[5] HARARI E, TO BE PUBLISHED
[6] HARARI E, 1973, THESIS PRINCETON U
[7] KERR DR, 1969, INT C PROPERTIES USE, P303
[8] MICHELETTI FB, 1971, IEEE C NUCLEAR SPACE
[9] SCHLESIER K, PRIVATE COMMUNICATIO
[10] SCHLESIER KM, 1972, IEEE NUCL S, VNS19, P275