METASTABILITY AND CHEMICAL BONDING OF S-INDUCED DEFECTS IN GAAS AND INP

被引：15

作者：

CHEONG, BH

CHANG, KJ

机构：

[1] Department of Physics, Korea Advanced Institute of Science and Technology, Yusung-ku, Daejon

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.71.4354

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We examine the pressure behavior of two S-induced deep levels, which arise from negatively charged broken-bond (DX-) and on-site (D-) geometries, in GaAs and InP, and find the DX-state to be the ground state over the D- and shallow donor states at pressures of 18 and 88 kbar, respectively, in good agreement with experimental data. The DX- state is characterized by the conduction band structure, while the formation of the D- state is closely related to the local chemical bonding, exhibiting the semiconductor-dependent pressure variation.

引用

页码：4354 / 4357

页数：4

共 22 条

[1] RELATIVISTIC NORM-CONSERVING PSEUDOPOTENTIALS [J].