EFFECTIVE MASS OF HOLES IN SILICON AND GERMANIUM

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作者：

SHTIVELMAN, KY

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SOVIET PHYSICS-SOLID STATE | 1963年 / 5卷 / 01期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：252 / 253

页数：2

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[3] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
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[4] VALENCE BAND PARAMETERS IN SILICON FROM CYCLOTRON RESONANCES IN CRYSTALS SUBJECTED TO UNIAXIAL STRESS
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[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 307 - 309
[5] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON
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[6] MAGNETO-RESISTANCE OF P-TYPE SEMICONDUCTING DIAMOND
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[7] CYCLOTRON RESONANCE MEASUREMENTS OF THE ENERGY BAND PARAMETERS OF GERMANIUM
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (3-4) : 281 - 288
[8] PIKUS GE, 1961, FIZ TVERD TELA, V3, P1001
[9] SHTIVELMAN KY, 1960, FIZ TVERD TELA, V2, P644
[10] SHTIVELMAN KY, 1960, FIZ TVERD TELA, V2, P499