ANALYTICAL THEORY OF 4-WAVE-MIXING IN SEMICONDUCTOR AMPLIFIERS

被引：50

作者：

MECOZZI, A

机构：

[1] Fondazione Ugo Bordoni, Roma, 00142

来源：

OPTICS LETTERS | 1994年 / 19卷 / 12期

关键词：

D O I：

10.1364/OL.19.000892

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The analytical theory of four-wave mixing in semiconductor amplifiers is developed. The theory applies to arbitrary saturation conditions. If carrier depletion and spectral hole burning are considered, the conversion efficiency is the maximum at a total input power that produces a gain compression of e-2 (approximately -9 dB), independently of the physical parameters of the amplifier.

引用

页码：892 / 894

页数：3

共 6 条

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[5] USKOV A, UNPUB IEEE J QUANTUM
[6] TERAHERTZ 4-WAVE-MIXING SPECTROSCOPY FOR STUDY OF ULTRAFAST DYNAMICS IN A SEMICONDUCTOR OPTICAL AMPLIFIER
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[J]. APPLIED PHYSICS LETTERS, 1993, 63 (09) : 1179 - 1181

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