BAND-STRUCTURE ENGINEERING AND DOPING OF WIDE-GAP II-VI SUPERLATTICES

被引：10
|
作者：
FASCHINGER, W [1 ]
FERREIRA, S [1 ]
SITTER, H [1 ]
机构：
[1] UNIV LINZ,INST PHYS EXPTL,A-4040 LINZ,AUSTRIA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期
关键词：
D O I：
10.1063/1.113152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It is shown that the free hole concentration for nitrogen doped ZnSe/ZnTe short period superlattices with a given average Te content of 15% can be increased from 1016 to 1019cm-3 by just increasing the SL period from 2.5 to 4.5 nm. This behavior can be understood in terms of a model that assumes a pinning of the Fermi level at an energetic position that is fixed with respect to the vacuum level. The model can be applied to other II-VI superlattices, and alternative cladding layers for blue laser diodes are proposed that should exhibit significantly higher p-doping levels than the currently used ZnMgSSe claddings.© 1995 American Institute of Physics.
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收藏
页码：2516 / 2518
页数：3
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