BAND-STRUCTURE ENGINEERING AND DOPING OF WIDE-GAP II-VI SUPERLATTICES

被引：10

作者：

FASCHINGER, W ^{[1
]}

FERREIRA, S ^{[1
]}

SITTER, H ^{[1
]}

机构：

[1] UNIV LINZ,INST PHYS EXPTL,A-4040 LINZ,AUSTRIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the free hole concentration for nitrogen doped ZnSe/ZnTe short period superlattices with a given average Te content of 15% can be increased from 1016 to 1019cm-3 by just increasing the SL period from 2.5 to 4.5 nm. This behavior can be understood in terms of a model that assumes a pinning of the Fermi level at an energetic position that is fixed with respect to the vacuum level. The model can be applied to other II-VI superlattices, and alternative cladding layers for blue laser diodes are proposed that should exhibit significantly higher p-doping levels than the currently used ZnMgSSe claddings.© 1995 American Institute of Physics.

引用

页码：2516 / 2518

页数：3

共 50 条

[31] POSITION OF THE CO-2+ LEVEL IN WIDE-GAP II-VI SEMICONDUCTORS
RADLINSKI, AP
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21): : 4477 - 4482
[32] Photoluminescence and structural properties of selected wide-gap II-VI solid solutions
Firszt, F
Legowski, S
Meczynska, H
Sekulska, B
Szatkowski, J
Paszkowicz, W
Marczak, M
SINGLE CRYSTAL GROWTH, CHARACTERIZATION, AND APPLICATIONS, 1999, 3724 : 234 - 238
[33] HYDROGENATION OF WIDE-BAND-GAP II-VI SEMICONDUCTORS
PONG, C
JOHNSON, NM
STREET, RA
WALKER, J
FEIGELSON, RS
DEMATTEI, RC
APPLIED PHYSICS LETTERS, 1992, 61 (25) : 3026 - 3028
[34] Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization
Sotomayor Torres, C.M., 1600, (23):
[35] NANOMETER FABRICATION TECHNIQUES FOR WIDE-GAP II-VI SEMICONDUCTORS AND THEIR OPTICAL CHARACTERIZATION
TORRES, CMS
SMART, AP
WATT, M
FOAD, MA
TSUTSUI, K
WILKINSON, CDW
JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (03) : 289 - 298
[36] Role of ionic processes in degradation of wide-gap II-VI semiconductor materials
Borkovskaya, LV
Dzhymaev, BR
Korsunskaya, NE
Markevich, IV
Singaevsky, AF
Sheinkman, MK
ACTA PHYSICA POLONICA A, 1998, 94 (02) : 255 - 259
[37] Microdefects and minority carrier diffusion lengths in II-VI wide-gap semiconductors
Yamaguchi, T
Yoshida, H
Abe, T
Kasada, H
Ando, K
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1998, 81 (10): : 55 - 64
[38] Very high quality crystals of wide-gap II-VI semiconductors: What for?
Mycielski, A
Szadkowski, A
Kaliszek, W
Witkowska, B
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: GROWTH, CHARACTERIZATION, AND APPLICATIONS OF SINGLE CRYSTALS, 2001, 4412 : 38 - 45
[39] Emission in wide band gap II-VI semiconductor compounds with low dimensional structure
Fan, XW
Yu, GY
Yang, Y
Shen, DZ
Zhang, JY
Liu, YC
Lu, YM
NANO SCIENCE AND TECHNOLOGY: NOVEL STRUCTURES AND PHENOMENA, 2003, : 214 - 219
[40] SURFACE ENGINEERING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF WIDE-GAP II-VI STRUCTURES
GRIESCHE, J
HOFFMANN, N
JACOBS, K
JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 55 - 58

← 1 2 3 4 5 →