HIGH-SPEED ELECTRON-BEAM ANNEALING OF ARSENIC AND GALLIUM IMPLANTED SILICON

被引：4

作者：

KLABES, R

GROTZSCHEL, R

VOELSKOW, M

PANZER, S

BARTSCH, H

机构：

[1] INST MANFRED VON ARDENNE,DRESDEN,GER DEM REP

[2] AKAD WISSENSCH DDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-402 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 64卷 / 01期

关键词：

D O I：

10.1002/pssa.2210640164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K73 / K75

页数：3

共 4 条

[1] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS [J].

KENNEDY, EF ;

LAU, SS ;

GOLECKI, I ;

MAYER, JW ;

TSENG, W ;

MINNUCCI, JA ;

KIRKPATRICK, AR .

RADIATION EFFECTS LETTERS, 1979, 43 (01) :31-36

[2] CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD [J].

MCMAHON, RA ;

AHMED, H ;

DOBSON, RM ;

SPEIGHT, JD .

ELECTRONICS LETTERS, 1980, 16 (08) :295-297

[3] SCANNING-ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

REGOLINI, JL ;

GIBBONS, JF ;

SIGMON, TW ;

PEASE, RFW ;

MAGEE, TJ ;

PENG, J .

APPLIED PHYSICS LETTERS, 1979, 34 (06) :410-412

[4] HIGH-SPEED SCANNING ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON LAYERS [J].

SCHILLER, S ;

PANZER, S ;

KLABES, R .

THIN SOLID FILMS, 1980, 73 (01) :221-226

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