OBSERVATION OF STRAIN-INDUCED SPLITTING OF DEGENERATE VALENCE BANDS USING ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY

被引:4
|
作者
RIOUX, D [1 ]
HOCHST, H [1 ]
机构
[1] UNIV WISCONSIN MADISON,CTR SYNCHROTRON RADIAT,3731 SCHNEIDER DR,STOUGHTON,WI 53589
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 03期
关键词
D O I
10.1103/PhysRevB.47.1434
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the observation of strain-induced splitting of degenerate valence bands at the GAMMA point in coherently strained Ge(100) layers using angle-resolved photoemission spectroscopy. Strain was supplied via pseudomorphic epitaxial growth of Ge films on well-ordered InP(100) substrates: the inherent lattice mismatch between the two semiconductors resulted in a 3.9% tensile biaxial strain in the Ge epilayers. A surfactant layer was employed to increase the critical layer thickness and film quality so that measurements could be made on high-quality, fully strained films. A comparison is made between experimental results and the theoretical predictions of a heterojunction band-offset theory developed by Van de Walle and Martin which incorporates strain.
引用
收藏
页码:1434 / 1440
页数:7
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