THE THERMOELECTRIC PROPERTIES OF MIXED CRYSTALS OF MG2GEXSI1-X

[1] Barrett C S, 1952, STRUCTURE METALS, V2rd

[2] BRAUER VG, 1950, Z ANORG CHEM, V262, P319

[3] A SIMPLE SPECIMEN HOLDER AND APPARATUS FOR MEASUREMENT OF CONDUCTIVITY AND HALL VOLTAGE OVER A TEMPERATURE RANGE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (12): : 512 - 513

[4] BUSCH G, 1953, HELV PHYS ACTA, V26, P578

[5] ELEKTRISCHE EIGENSCHAFTEN DER INTERMETALLISCHEN VERBINDUNGEN MG2SI, MG2GE, MG2SN UND MG2PB [J]. PHYSICA, 1954, 20 (11): : 1067 - 1072

[6] ELLICKSON RT, 5TH U OR DEP PHYS Q

[7] Ioffe A. F., 1957, SEMICONDUCTOR THERMO

[8] IOFFE AF, 1960, PHYSICS SEMICONDUCTO

[9] IOFFE AV, 1956, IZV AKAD NAUK SSSR F, V20, P55

[10] THERMAL RESISTANCE DUE TO POINT DEFECTS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1960, 119 (02): : 507 - 509

[1] Barrett C S, 1952, STRUCTURE METALS, V2rd

[2] BRAUER VG, 1950, Z ANORG CHEM, V262, P319

[3] A SIMPLE SPECIMEN HOLDER AND APPARATUS FOR MEASUREMENT OF CONDUCTIVITY AND HALL VOLTAGE OVER A TEMPERATURE RANGE [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1957, 34 (12): : 512 - 513

[4] BUSCH G, 1953, HELV PHYS ACTA, V26, P578

[5] ELEKTRISCHE EIGENSCHAFTEN DER INTERMETALLISCHEN VERBINDUNGEN MG2SI, MG2GE, MG2SN UND MG2PB [J]. PHYSICA, 1954, 20 (11): : 1067 - 1072

[6] ELLICKSON RT, 5TH U OR DEP PHYS Q

[7] Ioffe A. F., 1957, SEMICONDUCTOR THERMO

[8] IOFFE AF, 1960, PHYSICS SEMICONDUCTO

[9] IOFFE AV, 1956, IZV AKAD NAUK SSSR F, V20, P55

[10] THERMAL RESISTANCE DUE TO POINT DEFECTS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1960, 119 (02): : 507 - 509