GAS-PHASE MONITORING OF REACTIONS UNDER INP MOVPE GROWTH-CONDITIONS FOR THE DECOMPOSITION OF TERTIARYBUTYL PHOSPHINE AND RELATED PRECURSORS

被引:31
作者
FAN, GH
HOARE, RD
PEMBLE, ME [1 ]
POVEY, IM
TAYLOR, AG
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,POB 88,SACKVILLE ST,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
[3] ADV MAT RES LAB,DEESIDE CH5 4BR,CLWYD,WALES
关键词
D O I
10.1016/0022-0248(92)90436-M
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Ex-situ Fourier transform infrared spectroscopy has been used to study the decomposition of tertiarybutylphosphine (TBP), trimethylindium (TMIn) and mixtures of TBP and TMIn under MOCVD conditions using dihydrogen as a carrier gas. IR bands due to TBP, TMIn, phosphine, isobutene, isobutane, ethene and methane have been monitored as a function of susceptor temperature. The decomposition of TBP alone in dihydrogen is observed to commence at temperatures above 773 K and is accompanied by the formation of isobutene, phosphine and isobutane. The pyrolysis of TBP is observed to be complete at temperatures in excess of 973 K. For TMIn in dihydrogen, the only observable product at temperatures greater than 573 K is methane. For TBP in the presence of TMIn a room temperature reaction is observed, the only detectable product of which is methane. The implication is that TMIn reacts in some way with TBP, possibly forming an "adduct" or polymer; however, decomposition products from TBP are not observed until temperatures are in excess of 573 K, while decomposition is observed to be complete at temperatures of 873 K. Once again isobutene, isobutane and phosphine formation accompanies the TBP decomposition at 573K. At temperatures in excess of 900 K, both methane and ethene were observed during both of these experiments and are assumed to arise via the decomposition of isobutene. The deposited product on the reactor wall was found to be InP and phosphorus (rhombohedral) by X-ray diffraction. Some mechanistic steps for these reactions are proposed. In addition, preliminary data for the decomposition of cyclohexylphosphine are presented.
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页码:49 / 55
页数:7
相关论文
共 8 条
  • [1] BLEACHLEY OT, 1965, J CHEM SOC, P3241
  • [2] ELUCIDATION OF THE ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH MECHANISM FOR INP
    BUCHAN, NI
    LARSEN, CA
    STRINGFELLOW, GB
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1024 - 1026
  • [3] GERRAD ND, 1987, THESIS U MANCHESTER
  • [4] HOARE R, IN PRESS
  • [5] HIGH-PURITY INP LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE
    IMORI, T
    NINOMIYA, T
    USHIKUBO, K
    KONDOH, K
    NAKAMURA, K
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2862 - 2864
  • [6] PYROLYSIS OF TRIMETHYLINDIUM
    JACKO, MG
    PRICE, SJW
    [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1964, 42 (05): : 1198 - &
  • [7] PYROLYSIS OF TERTIARYBUTYLPHOSPHINE
    LI, SH
    LARSEN, CA
    BUCHAN, NI
    STRINGFELLOW, GB
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (03) : 457 - 464
  • [8] MOCVD GROWN INP/INGAAS STRUCTURES FOR OPTICAL RECEIVERS
    THRUSH, EJ
    CURETON, CG
    BRIGGS, ATR
    [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 870 - 876