Theoretical prediction of equation of state for semiconductors

被引：0

作者：

Pande, Brijesh K. ^{[1
]}

Rai, H. K. ^{[2
]}

Pande, Anjani K. ^{[3
]}

Singh, Chandra K. ^{[1
]}

机构：

[1] MMM Univ Technol, Dept Appl Sci, Gorakhpur, Uttar Pradesh, India

[2] Sri JN PG Coll, Dept Chem, Solid State Chem Lab, Lucknow, Uttar Pradesh, India

[3] Sherwood Coll Engn Res & Technol, Dept Appl Sci, Barabanki, India

来源：

INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS | 2016年 / 9卷 / 02期

关键词：

Semiconductors; Compression; Equation of State;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The isothermal EOS provides a powerful tool for theoretical prediction of different thermo elastic properties at extreme compressions. In the present work an attempt has been made for theoretical computation of pressure dependence of compression for different semi conducting materials viz. FeSi2, SnS,, AlN, GaN, MoN,. For this computation four different isothermal EOS viz. Tait EOS, Murnaghan EOS, Shanker EOS, and Suzuki EOS are used. The obtained results are compared with available experimental data which reveals that Murnaghan EOS is best suited for theoretical prediction of compression for semiconductors at different pressure ranges.

引用

页码：173 / 181

页数：9

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