AMPLIFICATION OF THE CURRENT IN A P-N-JUNCTION WITH HOT CARRIERS

被引：0
|
作者：
BOCHKAREVA, NI
VEINGER, AI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：328 / 331
页数：4
相关论文
共 50 条
  • [41] HOT-CARRIER PHOTO-EMF ACROSS A P-N-JUNCTION
    AKOPYAN, EA
    VEINGER, AI
    PARITSKII, LG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04): : 482 - 485
  • [42] AMORPHOUS SILICON P-N-JUNCTION
    SPEAR, WE
    LECOMBER, PG
    KINMOND, S
    BRODSKY, MH
    APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
  • [43] SEPARATION AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN THE SPACE-CHARGE REGION OF A P-N-JUNCTION
    ASRYAN, LV
    POLOVKO, YA
    SHIK, AY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 538 - 541
  • [44] HOT-CARRIER THERMO-EMF ACROSS A P-N-JUNCTION
    VEINGER, AI
    PARITSKII, LG
    AKOPYAN, EA
    DADAMIRZAEV, G
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 144 - 148
  • [45] PHOTOELECTRIC EFFECT IN A SILICON P-N-JUNCTION IN THE CASE OF INTRABAND OPTICAL HEATING OF CARRIERS
    ANDRIANOV, AV
    VALOV, PM
    SUKHANOV, VL
    TUCHKEVICH, VV
    SHMIDT, NM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 507 - 510
  • [46] P-N-JUNCTION CAPACITANCE THERMOMETERS
    KATSUHATA, M
    YAMAGATA, S
    MIYAYAMA, Y
    HARIU, T
    SHIBATA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05): : 878 - 881
  • [47] P-N-JUNCTION AS A MEMORY DEVICE
    BAPAT, MN
    SHRIVASTAVA, SK
    SINGH, G
    SIVARAMAN, S
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1985, 23 (02) : 117 - 117
  • [48] AVALANCHE MULTIPLICATION OF ELECTRON-BEAM-GENERATED CARRIERS IN A SILICON P-N-JUNCTION
    DONOLATO, C
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (13) : 1781 - 1788
  • [49] CURRENT AMPLIFICATION BY SILICON P-N JUNCTION
    KANAI, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1951, 6 (03) : 211 - 212
  • [50] CAPTURE OF CARRIERS BY LOCAL IMPURITY CLUSTERS IN THE ELECTRIC-FIELD OF A P-N-JUNCTION
    EREMIN, VK
    STROKAN, NB
    CHIKALOVALUZINA, OP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 42 - 45
12345