AMPLIFICATION OF THE CURRENT IN A P-N-JUNCTION WITH HOT CARRIERS

被引：0

作者：

BOCHKAREVA, NI

VEINGER, AI

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 03期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：328 / 331

页数：4

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[1] CURRENT OF HOT CARRIERS ACROSS A P-N-JUNCTION
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OKSMAN, YA
SEMENOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1441 - 1441
[2] AMPLIFICATION IN A P-N-JUNCTION IN SILICON CONTAINING HOT CARRIERS
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[3] IMPEDANCE OF A P-N-JUNCTION WITH HOT CARRIERS
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[4] CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS
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GNILOV, SV
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[5] INFLUENCE OF DEFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF A P-N-JUNCTION WITH HOT CARRIERS
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[6] KINETICS OF AMPLIFICATION IN A HOT-CARRIER P-N-JUNCTION
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[7] CHARACTERISTICS OF AMPLIFICATION IN A HOT-CARRIER P-N-JUNCTION
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SARGSYAN, MP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 523 - 526
[8] THERO-PHOTOELECTRIC EFFECTS IN A P-N-JUNCTION WITH HOT CARRIERS
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1344 - 1346
[9] EFFECT OF AN INTENSE MICROWAVE FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF A P-N-JUNCTION WITH HOT CARRIERS
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[10] FLUCTUATIONS OF RETURNING CARRIERS CURRENT OF REVERSE BIASED P-N-JUNCTION
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