SELF-DIFFUSION AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GAAL)AS SUPERLATTICES

被引：0

作者：

WANG, E

机构：

[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA

[2] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1990年 / 7卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped (GaAl)As superlattices have been determined by the calculated electronic structures using recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.

引用

页码：506 / 509

页数：4

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