SELF-DIFFUSION AND IMPURITY-DIFFUSION MECHANISMS IN UNDOPED AND MODULATION-DOPED (GAAL)AS SUPERLATTICES

被引：0
|
作者：
WANG, E
机构：
[1] ACAD SINICA,INT CTR MAT PHYS,SHENYANG 110015,PEOPLES R CHINA
[2] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA
来源：
CHINESE PHYSICS LETTERS | 1990年 / 7卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The charged states of antisites and interstitials in undoped and n- or p-type Si modulation-doped (GaAl)As superlattices have been determined by the calculated electronic structures using recursion method within tight-binding formalism. Based on the behavior of these point defects, some new mechanisms that describe the self-diffusion and impurity diffusion processes are suggested and discussed.
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页码：506 / 509
页数：4
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