HIGH-PERFORMANCE, HIGH-RELIABILITY INP/GAINAS P-I-N PHOTODIODES AND FLIP-CHIP INTEGRATED RECEIVERS FOR LIGHTWAVE COMMUNICATIONS

被引：15
|
作者：
WADA, O [1 ]
MAKIUCHI, M [1 ]
HAMAGUCHI, H [1 ]
KUMAI, T [1 ]
MIKAWA, T [1 ]
机构：
[1] FUJITSU LABS LTD,OPT SEMICOND DEVICES LAB,ATSUGI 24301,JAPAN
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1991年 / 9卷 / 09期
关键词：
D O I：
10.1109/50.85818
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InP/GaInAs p-i-n photodiodes suitable for flip-chip integration have been developed for realizing high quantum efficiency, low capacitance, high-speed response, easy fiber alignment, and high reliability. The applicability of flip-chip p-i-n photodiodes to integrated receivers has been shown in the fabrication of a p-i-n amplifier receiver, which has exhibited a sensitivity of -27.4 dBm at 2 Gb/s, NRZ.
引用
收藏
页码：1200 / 1207
页数：8
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