FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS

被引：88

作者：

HIRAO, M

DOI, A

TSUJI, S

NAKAMURA, M

AIKI, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期

关键词：

D O I：

10.1063/1.328396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4539 / 4540

页数：2

相关论文

共 6 条

[1] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[2] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
HSIEH, JJ
SHEN, CC
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 429 - 431
[3] BURIED STRIPE GAINASP-INP DH LASER PREPARED BY USING MELTBACK METHOD
KANO, H
OE, K
ANDO, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1887 - 1888
[4] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS
OLSEN, GH
NUESE, CJ
ETTENBERG, M
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 262 - 264
[5] 1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS
SHEN, CC
HSIEH, JJ
LIND, TA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 353 - 354
[6] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
YAMAMOTO, T
SAKAI, K
AKIBA, S
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 95 - 98