FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS

被引:88
作者
HIRAO, M
DOI, A
TSUJI, S
NAKAMURA, M
AIKI, K
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D O I
10.1063/1.328396
中图分类号
O59 [应用物理学];
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页码:4539 / 4540
页数:2
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[1]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[2]   ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].
HSIEH, JJ ;
SHEN, CC .
APPLIED PHYSICS LETTERS, 1977, 30 (08) :429-431
[3]   BURIED STRIPE GAINASP-INP DH LASER PREPARED BY USING MELTBACK METHOD [J].
KANO, H ;
OE, K ;
ANDO, S ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1887-1888
[4]   LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J].
OLSEN, GH ;
NUESE, CJ ;
ETTENBERG, M .
APPLIED PHYSICS LETTERS, 1979, 34 (04) :262-264
[5]   1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS [J].
SHEN, CC ;
HSIEH, JJ ;
LIND, TA .
APPLIED PHYSICS LETTERS, 1977, 30 (07) :353-354
[6]   IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].
YAMAMOTO, T ;
SAKAI, K ;
AKIBA, S ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98