FABRICATION OF A-SI-H THIN-FILM TRANSISTORS ON 4-INCH GLASS SUBSTRATES BY A LARGE AREA ION DOPING TECHNIQUE

被引：8

作者：

YOSHIDA, A ^{[1
]}

NUKAYAMA, M ^{[1
]}

ANDOH, Y ^{[1
]}

KITAGAWA, M ^{[1
]}

HIRAO, T ^{[1
]}

机构：

[1] NISSHIN ELECT CO LTD,DIV RES & DEV,KYOTO 615,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 1A期

关键词：

A-SI-H; THIN FILM TRANSISTOR; LIQUID CRYSTAL DISPLAY; RF ION SOURCE; ION IMPLANTATION WITHOUT MASS SEPARATION; CHARGE ACCUMULATION; PHOSPHORUS; HYDROGEN; GIANT MICROELECTRONICS;

D O I：

10.1143/JJAP.30.L67

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed a large area ion doping apparatus with an rf ion source of 50 cm in diameter. Charge accumulation during ion doping was suppressed by using a double grid. we fabricated a-Si:H TFT's on a 4-inch glass substrate by using the doping apparatus. By optimizing the thickness of the passivation film of TFT's, a field effect mobility, threshold voltage and an ON/OFF current ratio of 0.6 cm2/V.s, 4.9 V and 10(7) , respectively, were obtained. We confirmed the uniformity of electrical properties for TFT's on 4-in. glass substrates to be about +/- 2%. These characteristics of TFT's are suitable for switching elements in a large area LCD.

引用

页码：L67 / L69

页数：3

共 7 条

[1] HIRANO R, 1987, J70C IEICE TECHN REP, P1
[2] CHARACTERIZATION OF A REACTIVE BROAD BEAM RADIO-FREQUENCY ION-SOURCE
LOSSY, R
ENGEMANN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 284 - 287
[3] DEVELOPMENT AND USE OF A LARGE AREA ULTRALOW ENERGY REACTIVE ION-BEAM
PROUDFOOT, G
MAHONY, CMO
PERRIN, R
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 103 - 106
[4] WILSON RG, 1973, ION BEAMS APPLICATIO, P270
[5] LARGE AREA DOPING TECHNIQUE USING AN ION-SOURCE OF RF DISCHARGE WITH MAGNETIC-FIELD
YOSHIDA, A
KITAGAWA, M
SETSUNE, K
HIRAO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07): : L1355 - L1357
[6] FORMATION OF SOURCE AND DRAIN REGIONS FOR A-SI-H THIN-FILM TRANSISTORS BY LOW-ENERGY ION DOPING TECHNIQUE
YOSHIDA, A
SETSUNE, K
HIRAO, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 90 - 93
[7] PHOSPHORUS DOPING FOR HYDROGENATED AMORPHOUS-SILICON FILMS BY A LOW-ENERGY ION DOPING TECHNIQUE
YOSHIDA, A
SETSUNE, K
HIRAO, T
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 253 - 255

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