INFLUENCE OF HOT CARRIER EFFECTS ON THERMAL NOISE OF FIELD-EFFECT TRANSISTORS

被引:25
|
作者
KLAASSEN, FM
机构
关键词
D O I
10.1109/T-ED.1970.17087
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:858 / &
相关论文
共 50 条
  • [31] EFFECTS OF ELECTRON-BOMBARDMENT ON NOISE IN JUNCTION GATE FIELD-EFFECT TRANSISTORS
    KRISHNAN, IN
    CHEN, TM
    SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1233 - 1240
  • [32] Terahertz Detection and Electronic Noise in Field-Effect Transistors
    Mahi, Abdelhamid
    Belghachi, Abderrahmane
    Marinchio, Hugues
    Palermo, Christophe
    Varani, Luca
    Shiktorov, Pavel
    Gruzhinskis, Viktor
    Starikov, Jevgenij
    2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2013,
  • [33] EQUILIBRIUM NOISE IN ION SENSITIVE FIELD-EFFECT TRANSISTORS
    HAEMMERLI, A
    JANATA, J
    BROPHY, JJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C135 - C135
  • [34] NOISE OF FIELD-EFFECT TRANSISTORS AT VERY HIGH FREQUENCIES
    KLAASSEN, FM
    PRINS, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (11) : 952 - &
  • [35] Automating measurements of noise temperature in field-effect transistors
    Volozheninov, I.O.
    Dyachkin, Yu.P.
    Novitskii, V.A.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Zavedenii Radioelektronika), 1988, 31 (08): : 107 - 109
  • [36] LOW NOISE GaAs FIELD-EFFECT TRANSISTORS.
    Ohkawa, Shinji
    Suyama, Katsuhiko
    Ishikawa, Hajime
    Fujitsu Scientific and Technical Journal, 1975, 11 (01): : 151 - 173
  • [37] NOISE OF HOT CARRIERS IN CHANNEL OF N-SILICON JUNCTION GATE FIELD-EFFECT TRANSISTORS
    SODINI, D
    ROLLAND, M
    LECOY, G
    NOUGIER, JP
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (06): : 705 - 705
  • [38] THE GATE CURRENT NOISE OF JUNCTION FIELD-EFFECT TRANSISTORS
    STOCKER, JD
    JONES, BK
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (01) : 93 - 102
  • [39] Electrical and Noise Characteristics of Graphene Field-Effect Transistors
    Shur, M.
    Rumyantsev, S.
    Liu, G.
    Balandin, A. A.
    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 145 - 149
  • [40] NOISE OF HOT CARRIERS IN CHANNEL OF N-SILICON JUNCTION GATE FIELD-EFFECT TRANSISTORS
    NOUGIER, JP
    SODINI, D
    ROLLAND, M
    GASQUET, D
    LECOY, G
    SOLID-STATE ELECTRONICS, 1978, 21 (01) : 133 - 138