EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP

被引：17

作者：

HEIM, U

RODER, O

PILKUHN, MH

机构：

[1] Physikalisches Institut, Universität Frankfurt/M.

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 17期

关键词：

D O I：

10.1016/0038-1098(69)90170-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The near edge photoluminescence of n-InP shows four emission lines at the lowest excitation level. The lines with lower energy gain in relative intensity as the excitation level increases. With further increase in excitation intensity, a new line emerges near 1.407 eV which shifts continuously to lower energy until stimulated emission occurs. © 1969.

引用

页码：1173 / &

共 15 条

[11] CATHODOLUMINESCENCE OF N-TYPE GAAS [J].