NEW DEEP-LEVEL PHOTOLUMINESCENCE BANDS OF HOMOEPITAXIAL CDTE-FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

FUJII, S

TERADA, T

FUJITA, Y

IUCHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1712 / L1714

页数：3

共 9 条

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[6] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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[7]

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[8] X-RAY STUDY OF THE CRYSTALLINE-STRUCTURE OF CDTE LAYERS GROWN ON (001), (111)A, AND (111)B CDTE SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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