RADIATION DAMAGE IN VANADIUM

被引：23
作者：
RAU, RC
LADD, RL
机构：
[1] General Electric Company, Nuclear Systems Programs, Cincinnati
来源：
JOURNAL OF NUCLEAR MATERIALS | 1969年 / 30卷 / 03期
关键词：
D O I：
10.1016/0022-3115(69)90245-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transmission electron microscopy has been used to study the microstructure of neutron irradiated single crystal vanadium. These observations revealed the presence of small defect clusters which, upon annealing, grew into resolvable dislocation loops, analyzed as interstitial in nature. The radiation-induced clusters and loops were stabilized during annealing by interaction with impurity precipitates. Damage shells, ascribed to transmutation reactions, were found surrounding certain particles believed to contain boron. © 1969.
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页码：297 / &
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