CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：29
|
作者：
DUPUIS, RD
DAPKUS, PD
HOLONYAK, N
KOLBAS, RM
机构：
[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期
关键词：
D O I：
10.1063/1.91206
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Room-temperature (∼26°C) continous operation of Al xGa1-xAs-GaAs multiple-quantum-well injection lasers has been achieved. These devices are grown by metalorganic chemical vapor deposition and employ active regions consisting of six GaAs quantum wells having a thickness Lz∼120 Å separated by five Al 0.30Ga0.70As barriers also ∼120 Å thick. These laser diodes operate on LO-phonon-assisted confined-particle transitions and exhibit low threshold current densities (Jth∼1660 A/cm 2) and high total external differential quantum efficiencies (ηext∼85%).
引用
收藏
页码：487 / 489
页数：3
相关论文
共 50 条
  • [21] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS
    HOLONYAK, N
    KOLBAS, RM
    REZEK, EA
    CHIN, R
    DUPUIS, RD
    DAPKUS, PD
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5392 - 5397
  • [22] UNIFORMITY OF QUANTUM WELL HETEROSTRUCTURE GAALAS LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    SCIFRES, DR
    BURNHAM, RD
    BERNSTEIN, M
    CHUNG, H
    ENDICOTT, F
    MOSBY, W
    TRAMONTANA, J
    WALKER, J
    YINGLING, RD
    APPLIED PHYSICS LETTERS, 1982, 41 (06) : 501 - 504
  • [23] BURIED HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS BY GE DIFFUSION FROM THE VAPOR
    DEPPE, DG
    PLANO, WE
    DALLESASSE, JM
    HALL, DC
    GUIDO, LJ
    HOLONYAK, N
    APPLIED PHYSICS LETTERS, 1988, 52 (10) : 825 - 827
  • [24] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF A GAINP/ALGAINP MULTIQUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    IKEDA, M
    TODA, A
    NAKANO, K
    MORI, Y
    WATANABE, N
    APPLIED PHYSICS LETTERS, 1987, 50 (16) : 1033 - 1034
  • [25] CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM WELL LASERS
    GUIDO, LJ
    JACKSON, GS
    HALL, DC
    PLANO, WE
    HOLONYAK, N
    APPLIED PHYSICS LETTERS, 1988, 52 (07) : 522 - 524
  • [26] ROOM-TEMPERATURE OPERATION OF GA(1-X)A1XAS-GAAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALLORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    DAPKUS, PD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (09) : 1195 - 1196
  • [27] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    DAPKUS, PD
    CHIN, R
    HOLONYAK, N
    KIRCHOEFER, SW
    APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267
  • [28] GaInNAs/GaAs multiple-quantum-well grown by metalorganic chemical vapor deposition using nitrogen carrier gas
    Nishida, T
    Takaya, M
    Kaneko, T
    Shimoda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4A): : 1511 - 1513
  • [29] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KUECH, TF
    VEUHOFF, E
    MEYERSON, BS
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 48 - 53
  • [30] PHOTOLUMINESCENCE OF ALXGA1-XAS SOLAR-CELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIRILLOV, D
    FORD, CW
    BIVAS, A
    POWELL, RA
    SOLAR CELLS, 1988, 25 (03): : 287 - 297
12345