共 5 条
- [1] PHOTON DRAG OF CARRIERS IN PHOTOIONIZATION OF NEUTRAL DEEP IMPURITY CENTERS IN SEMICONDUCTORS WITH A MANY-VALLEY ENERGY-SPECTRUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 786 - 787
- [2] ABSORPTION OF LIGHT BY 2-PHOTON TRANSITIONS IN NEUTRAL DEEP IMPURITY CENTERS IN QUANTIZED SEMICONDUCTOR FILM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1314 - 1316
- [3] THEORY OF THE DRAG EFFECT DUE TO PHOTON MOMENTUM IN 2-PHOTON INTERBAND OPTICAL-TRANSITIONS INVOLVING DEEP IMPURITY CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (06): : 700 - 701
- [4] ELECTRON-DRAG CURRENT IN THE CASE OF 2-PHOTON IONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (08): : 887 - 889
- [5] DRAG OF CARRIERS BY PHOTONS DUE TO ONE-PHOTON AND 2-PHOTON PHOTOIONIZATION OF DEEP IMPURITY CENTERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 309 - 310