ABSORPTION OF LIGHT AND DRAG EFFECT DUE TO 2-PHOTON TRANSITIONS FROM DEEP NEUTRAL IMPURITY CENTERS IN SEMICONDUCTORS WITH A MANY-VALLEY ENERGY-SPECTRUM

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作者：

BELORUSETS, ED

IMAMOV, EZ

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 02期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：124 / 126

页数：3

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[1] PHOTON DRAG OF CARRIERS IN PHOTOIONIZATION OF NEUTRAL DEEP IMPURITY CENTERS IN SEMICONDUCTORS WITH A MANY-VALLEY ENERGY-SPECTRUM
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[3] THEORY OF THE DRAG EFFECT DUE TO PHOTON MOMENTUM IN 2-PHOTON INTERBAND OPTICAL-TRANSITIONS INVOLVING DEEP IMPURITY CENTERS
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[4] ELECTRON-DRAG CURRENT IN THE CASE OF 2-PHOTON IONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
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[5] DRAG OF CARRIERS BY PHOTONS DUE TO ONE-PHOTON AND 2-PHOTON PHOTOIONIZATION OF DEEP IMPURITY CENTERS
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