NEW SILICIDE INTERFACE MODEL FROM STRUCTURAL ENERGY CALCULATIONS

[1] LINEAR METHODS IN BAND THEORY [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083

[2] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405

[5] COMIN F, 1986, 8601 STANF SYNCHR RA, P115

[6] FISCHER A, IN PRESS

[7] STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4769 - 4773

[8] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[9] ENERGETICS OF SILICIDE INTERFACE FORMATION [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (23) : 2517 - 2520

[10] SEMICONDUCTOR CHARGE-DENSITIES WITH HARD-CORE AND SOFT-CORE PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 662 - 665

[1] LINEAR METHODS IN BAND THEORY [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083

[2] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION [J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405

[5] COMIN F, 1986, 8601 STANF SYNCHR RA, P115

[6] FISCHER A, IN PRESS

[7] STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS [J]. PHYSICAL REVIEW B, 1987, 36 (09): : 4769 - 4773

[8] GIBSON JM, 1982, APPL PHYS LETT, V41, P818, DOI 10.1063/1.93699

[9] ENERGETICS OF SILICIDE INTERFACE FORMATION [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (23) : 2517 - 2520

[10] SEMICONDUCTOR CHARGE-DENSITIES WITH HARD-CORE AND SOFT-CORE PSEUDOPOTENTIALS [J]. PHYSICAL REVIEW LETTERS, 1979, 42 (10) : 662 - 665