EPITAXIAL-GROWTH OF PBTE ON (100) GAAS SUBSTRATES

被引：6
|
作者：
CLEMENS, H [1 ]
OFNER, P [1 ]
BAUER, G [1 ]
HONG, JM [1 ]
CHANG, LL [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
MATERIALS LETTERS | 1988年 / 7卷 / 04期
关键词：
D O I：
10.1016/0167-577X(88)90167-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：127 / 130
页数：4
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