ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE

被引：556

作者：

FEENSTRA, RM

STROSCIO, JA

TERSOFF, J

FEIN, AP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 58卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.58.1192

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1192 / 1195

页数：4

共 15 条

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[3]

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[5]

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[7] REAL-SPACE OBSERVATION OF PI-BONDED CHAINS AND SURFACE DISORDER ON SI(111)2X1 [J].

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[8]

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[9] SPECTROSCOPY OF SINGLE ATOMS IN THE SCANNING TUNNELING MICROSCOPE [J].

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[10] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].

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