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- [41] IMPROVEMENT OF MINORITY-CARRIER PROPERTIES OF GAAS ON SI III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 349 - 355
- [42] MINORITY-CARRIER DIFFUSION LENGTH MAPPING OF EXTENDED CRYSTALLOGRAPHIC DEFECTS IN SEMICONDUCTOR SILICON DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 239 - 242
- [43] INFLUENCE OF PROCESSING TEMPERATURE ON MINORITY-CARRIER DIFFUSION LENGTH OF LOWER PURITY SILICON ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1987, 67 (04): : 453 - 458
- [44] ON THE EFFECTIVE MINORITY-CARRIER DIFFUSION LENGTH OF POLYCRYSTALLINE SILICON SOLAR-CELLS SOLAR CELLS, 1983, 9 (03): : 209 - 214
- [45] Measuring minority-carrier diffusion length using a Kelvin probe force microscope PHYSICAL REVIEW B, 2000, 61 (16): : 11041 - 11046
- [46] INFLUENCE OF RAPID THERMAL-PROCESSING ON MINORITY-CARRIER DIFFUSION LENGTH IN SILICON RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 185 - 190