EFFECT OF REABSORBED RADIATION ON MINORITY-CARRIER DIFFUSION LENGTH IN GAAS

被引:27
|
作者
ETTENBERG, M [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
关键词
D O I
10.1063/1.89337
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:207 / 210
页数:4
相关论文
共 50 条
  • [31] MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN POLYCRYSTALLINE SOLAR-CELLS
    SOPORI, BL
    LEGGE, RN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C111 - C111
  • [32] MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN SEMICONDUCTORS USING A COMPUTERIZED FACILITY
    GERMANOVA, K
    NIKOLOV, L
    KHARDALOV, C
    TSVETKOV, T
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1994, 37 (02) : 224 - 227
  • [33] CHANGE OF MINORITY-CARRIER DIFFUSION LENGTH IN POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT
    OSTAPENKO, S
    JASTRZEBSKI, L
    SOPORI, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (11) : 1494 - 1500
  • [34] IMPACT OF BULK DEFECT ON MINORITY-CARRIER DIFFUSION LENGTH AND DEVICE LEAKAGE
    FUNG, MS
    VERKUIL, RL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C96 - C96
  • [35] EFFECT OF GRAIN-BOUNDARIES ON THE MINORITY-CARRIER DIFFUSION LENGTH IN INP SOLAR-CELLS
    TARRICONE, L
    DON, E
    PEARSALL, NM
    COUTTS, TJ
    SOLAR CELLS, 1982, 7 (03): : 281 - 290
  • [36] EFFECT OF LOCALIZED RECOMBINATION PLANES ON MINORITY-CARRIER DIFFUSION LENGTH IN SILICON SOLAR-CELLS
    SHIMOKAWA, R
    HAYASHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L736 - L738
  • [37] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
    ETTENBERG, M
    KRESSEL, H
    GILBERT, SL
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
  • [38] EFFECT OF LOCALIZED RECOMBINATION PLANES IN MINORITY-CARRIER DIFFUSION LENGTH IN SILICON SOLAR CELLS.
    Shimokawa, Ryuichi
    Hayashi, Yutaka
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (09): : 736 - 738
  • [39] Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy
    Akutsu, Keiichi
    Kawakami, Hideki
    Suzuno, Mitsushi
    Yaguchi, Takashi
    Jiptner, Karolin
    Chen, Jun
    Sekiguchi, Takashi
    Ootsuka, Teruhisa
    Suemasu, Takashi
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)