EFFECT OF REABSORBED RADIATION ON MINORITY-CARRIER DIFFUSION LENGTH IN GAAS

被引:27
作者
ETTENBERG, M [1 ]
机构
[1] RCA LABS,PRINCETON,NJ 08540
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D O I
10.1063/1.89337
中图分类号
O59 [应用物理学];
学科分类号
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页码:207 / 210
页数:4
相关论文
共 10 条
[1]   SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].
ASBECK, P .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :820-822
[2]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[3]   SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS [J].
DUMKE, WP .
PHYSICAL REVIEW, 1957, 105 (01) :139-144
[4]   MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY [J].
ETTENBERG, M ;
KRESSEL, H ;
GILBERT, SL .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) :827-831
[5]   INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J].
ETTENBERG, M ;
KRESSEL, H .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1538-1544
[6]   QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS [J].
HWANG, CJ .
PHYSICAL REVIEW B, 1972, 6 (04) :1355-&
[7]  
LOFERSKI JJ, 1961, RCA REV, V22, P38
[8]   TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].
SPRINGTHORPE, AJ ;
KING, FD ;
BECKE, A .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118
[9]   PHOTON RECYCLING IN SEMICONDUCTOR LASERS [J].
STERN, F ;
WOODALL, JM .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3904-3906
[10]   USE OF SCHOTTKY-DIODE COLLECTORS FOR SEM DETERMINATION OF BULK DIFFUSION LENGTHS [J].
VANOPDORP, C ;
PETERS, RC ;
KLERK, M .
APPLIED PHYSICS LETTERS, 1974, 24 (03) :125-126