MORPHOLOGY DEPENDENT PLATINUM SILICIDE FORMATION IN OXYGEN AMBIENT

被引：12
作者：
HARDER, C
HAMMER, L
MULLER, K
机构：
[1] Universität Erlangen-Nürnberg, Erlangen
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1994年 / 146卷 / 01期
关键词：
D O I：
10.1002/pssa.2211460132
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The temperature induced silicide growth of thin (50 nm) platinum films after room temperature deposition on Si(100) is studied by scanning electron microscopy methods (Auger crater edge depth profiling and transmission techniques) and scanning tunneling microscopy (STM). The presence of oxygen is known to slow down or even to stop this reaction before all metal is consumed by the silicide formation process. We found the influence of oxygen during the annealing of the system to be strongly dependent on the morphology of the as-deposited Pt film. Based on the results obtained for processing Pt films with different grain sizes in UHV and 10 Pa oxygen ambient, respectively, a model for the oxygen induced inhibition of the silicide formation is proposed suggesting a grain boundary diffusion mechanism of oxygen in the unreacted platinum.
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页码：385 / 392
页数：8
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