FORMATION OF SIN FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING [(CH3)(2)N]3SIN3

被引：0
|
作者：
KITOH, H
MUROYAMA, M
机构：
[1] Process Division, Semiconductor Company, Sony Corporation, Atsugi-si, Kanagawa, 243, 4-14-1, Asahi-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期
关键词：
PLASMA-ENHANCED CVD; PASSIVATION FILM; SILICON NITRIDE; ORGANIC SOURCE; STEP COVERAGE;
D O I：
10.1143/JJAP.33.7076
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An organic source gas, tris-dimethyl-amino-silyl-azide (TDSA, [(CH3)(2)N]3SiN3), was newly synthesized and utilized for the deposition of a passivation film of sub-half-micrometer devices. Deposition temperature dependence of the film formed by plasma-enhanced chemical vapor deposition (PECVD) using TDSA was investigated and step coverage of the TDSA film was examined. As a result, it was clarified that hydrocarbon content in the film decreased with increasing deposition temperature. The bottom step coverage of the films formed using TDSA was greatly improved compared to that of the conventional silicon nitride film.
引用
收藏
页码：7076 / 7079
页数：4
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