FORMATION OF SIN FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING [(CH3)(2)N]3SIN3

被引：0

作者：

KITOH, H

MUROYAMA, M

机构：

[1] Process Division, Semiconductor Company, Sony Corporation, Atsugi-si, Kanagawa, 243, 4-14-1, Asahi-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

PLASMA-ENHANCED CVD; PASSIVATION FILM; SILICON NITRIDE; ORGANIC SOURCE; STEP COVERAGE;

D O I：

10.1143/JJAP.33.7076

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An organic source gas, tris-dimethyl-amino-silyl-azide (TDSA, [(CH3)(2)N]3SiN3), was newly synthesized and utilized for the deposition of a passivation film of sub-half-micrometer devices. Deposition temperature dependence of the film formed by plasma-enhanced chemical vapor deposition (PECVD) using TDSA was investigated and step coverage of the TDSA film was examined. As a result, it was clarified that hydrocarbon content in the film decreased with increasing deposition temperature. The bottom step coverage of the films formed using TDSA was greatly improved compared to that of the conventional silicon nitride film.

引用

页码：7076 / 7079

页数：4

共 48 条

[21] Preparation of low-dielectric-constant F-Doped SiO2 films by plasma-enhanced chemical vapor deposition
Lim, SW
Shimogaki, Y
Nakano, Y
Tada, K
Komiyama, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1468 - 1473
[22] STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2)
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YAMAMUKA, M
MAKITA, T
NAKA, J
YUUKI, A
MIKAMI, N
ONO, K
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[23] Improving the Optical Properties of SiNx:H Thin Film by Optimizing NH3:SiH4 Gas Ratio Using Plasma-Enhanced Chemical Vapor Deposition
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YAMAMUKA, M
YUUKI, A
ONO, K
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[25] Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
Dendooven, J.
Deduytsche, D.
Musschoot, J.
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Detavernier, C.
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[26] Plasma-enhanced chemical vapor-deposited SiN and liquid-phase-deposited SiO2 stack double-layer anti-reflection films for multi-crystalline solar cells
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[27] High-rate growth of films of dense, aligned double-walled carbon nanotubes using microwave plasma-enhanced chemical vapor deposition
Hiramatsu, M
Nagao, H
Taniguchi, M
Amano, H
Ando, Y
Hori, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (20-23): : L693 - L695
[28] Formation of a Si-Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures
Scardera, G.
Bellet-Amalric, E.
Bellet, D.
Puzzer, T.
Pink, E.
Conibeer, G.
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[29] THIN-FILM GROWTH OF PB(ZR, TI)O3 BY PHOTOENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NO2
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KATAYAMA, T
SUGIYAMA, M
SHIOSAKI, T
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[30] Frontiers in preparation of Si3N4 powder by radio frequency plasma chemical vapor deposition
Hong, RY
Zheng, GL
Li, HZ
Ding, JM
PROCESSING AND HANDLING OF POWDERS AND DUSTS, 1997, : 13 - 22

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