ION-BEAM DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：4

作者：

KASDAN, A ^{[1
]}

GOSHORN, DP ^{[1
]}

LANFORD, WA ^{[1
]}

机构：

[1] SUNY ALBANY,ALBANY,NY 12222

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：305 / 306

页数：2

共 50 条

[41] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
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