ION-BEAM DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：4
|
作者：
KASDAN, A [1 ]
GOSHORN, DP [1 ]
LANFORD, WA [1 ]
机构：
[1] SUNY ALBANY,ALBANY,NY 12222
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.571287
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：305 / 306
页数：2
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