HIGHLY RELIABLE OPERATION OF STRAIN-COMPENSATED 0.98-MU-M INGAAS/INGAP/GAAS LASERS WITH INGAASP STRAINED BARRIERS FOR EDFAS

被引：13
|
作者：
TOYONAKA, T [1 ]
SAGAWA, M [1 ]
HIRAMOTO, K [1 ]
SHINODA, K [1 ]
UOMI, K [1 ]
OHISHI, A [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 03期
关键词：
SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; RELIABILITY;
D O I：
10.1049/el:19950154
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Highly reliable operation of 0.9 mu m strain-compensated InGaAs/ InGaAsP lasers is demonstrated for the first time with an estimated lifetime of 170 kh at 25 degrees C. Moreover, we reveal that the degradation rates at 90 degrees C and 80 mW output power are four times smaller than those of identical lasers with GaAs barriers.
引用
收藏
页码：198 / 199
页数：2
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