HIGHLY RELIABLE OPERATION OF STRAIN-COMPENSATED 0.98-MU-M INGAAS/INGAP/GAAS LASERS WITH INGAASP STRAINED BARRIERS FOR EDFAS

被引：13

作者：

TOYONAKA, T ^{[1
]}

SAGAWA, M ^{[1
]}

HIRAMOTO, K ^{[1
]}

SHINODA, K ^{[1
]}

UOMI, K ^{[1
]}

OHISHI, A ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 03期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS; RELIABILITY;

D O I：

10.1049/el:19950154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly reliable operation of 0.9 mu m strain-compensated InGaAs/ InGaAsP lasers is demonstrated for the first time with an estimated lifetime of 170 kh at 25 degrees C. Moreover, we reveal that the degradation rates at 90 degrees C and 80 mW output power are four times smaller than those of identical lasers with GaAs barriers.

引用

页码：198 / 199

页数：2

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