PRELIMINARY RESULTS OF AN ION SCATTERING STUDY OF PHOSPHOSILICATE GLASS GETTERING

被引：15

作者：

MEEK, RL ^{[1
]}

GIBBON, CF ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期

关键词：

D O I：

10.1149/1.2401834

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：444 / 447

页数：4

共 19 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[2] STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J].

BUCK, TM ;

WHEATLEY, GH .

SURFACE SCIENCE, 1972, 33 (01) :35-&

[3] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS [J].

BUCK, TM ;

CASEY, HC ;

DALTON, JV ;

YAMIN, M .

BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09) :1827-+

[4] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].

COLLINS, CB ;

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1409-1414

[5] PROPERTIES OF GOLD-DOPED SILICON [J].

COLLINS, CB ;

CARLSON, RO ;

GALLAGHER, CJ .

PHYSICAL REVIEW, 1957, 105 (04) :1168-1173

[6] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[7] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[8] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[9] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J].

ING, SW ;

MORRISON, RE ;

ALT, LL ;

ALDRICH, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :533-537

[10] GETTERING OF GOLD AND COPPER FROM SILICON [J].

LAMBERT, JL ;

REESE, M .

SOLID-STATE ELECTRONICS, 1968, 11 (11) :1055-&

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