EFFECT OF UNIAXIAL STRESS AND DOPING ON ONE-PHONON RAMAN-SPECTRUM OF GAP

被引:26
作者
BALSLEV, I
机构
[1] ODENSE UNIV,PHYS INST,ODENSE,DENMARK
[2] MAX PLANCK INST FESTKORPER FORSCH,STUTTGART,WEST GERMANY
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1974年 / 61卷 / 01期
关键词
D O I
10.1002/pssb.2220610116
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:207 / 213
页数:7
相关论文
共 17 条
[1]   EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].
ANASTASSAKIS, E ;
PINCZUK, A ;
BURSTEIN, E ;
POLLAK, FH ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+
[2]   INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].
BALSLEV, I .
PHYSICAL REVIEW, 1966, 143 (02) :636-&
[3]  
BALSLEV I, 1972, SEMICONDUCTORS SEMIM, V9
[4]   STRESS DEPENDENCE OF RAMAN FREQUENCIES AND ELASTIC-CONSTANTS OF CUBIC SEMICONDUCTORS [J].
BELL, MI .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (02) :675-&
[5]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[6]   STRESS-DEPENDENT RAMAN FREQUENCY AND LINEWIDTH IN ALPHA-QUARTZ [J].
HARKER, YD ;
SHE, CY ;
EDWARDS, DF .
APPLIED PHYSICS LETTERS, 1969, 15 (08) :272-&
[7]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[8]   SECOND-ORDER RAMAN-SPECTRA AND PHONON DISPERSION IN GAP [J].
HOFF, RM ;
IRWIN, JC .
CANADIAN JOURNAL OF PHYSICS, 1973, 51 (01) :63-76
[9]  
Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771
[10]  
KOENIG SH, 1963, SEMICONDUCTORS