共 50 条
- [41] INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON THE SCHOTTKY-BARRIER HEIGHT OF SI(111)-PB PHYSICAL REVIEW B, 1995, 51 (24): : 17740 - 17743
- [42] EFFECT OF SI AND GE INTERFACE LAYERS ON THE SCHOTTKY-BARRIER HEIGHT OF METAL CONTACTS TO GAAS CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 125 - 136
- [43] Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOId TRANSISTOR SCALING- METHODS, MATERIALS AND MODELING, 2006, 913 : 27 - +
- [44] FIELD DEPENDABILITY OF A HEIGHT OF THE SCHOTTKY-BARRIER IN SILLENITE CRYSTALS ZHURNAL TEKHNICHESKOI FIZIKI, 1989, 59 (11): : 183 - 185
- [47] COMMENTS ON THE MODIFICATION OF SCHOTTKY-BARRIER HEIGHT BY INTERFACIAL OXIDES PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01): : K29 - K33
- [49] THE VARIATION OF SCHOTTKY-BARRIER HEIGHT DUE TO AN INTERFACIAL LAYER SURFACE TECHNOLOGY, 1980, 11 (06): : 411 - 414