PHOTOPUMPED ROOM-TEMPERATURE CONTINUOUS OPERATION OF NATIVE-OXIDE-EMBEDDED ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM-WELL-HETEROSTRUCTURE LASERS

被引：18

作者：

SUGG, AR ^{[1
]}

CHEN, EI ^{[1
]}

RICHARD, TA ^{[1
]}

HOLONYAK, N ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.354868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented on the 300 K (and 77 K) continuous photopumped laser operation of AlyGa1-yAs-GaAs-InxGa1-xAs quantum-well heterostructures (QWHs) that have been oxidized (H2O vapor + N2, 425-degrees-C) selectively along the high-band-gap heterolayers located on either side of a GaAs waveguide (WG) region with an InxGa1-xAs QW in its center. Transmission electron microscope images show that the oxide-embedded GaAs-InxGa1-xAs WG + QW active region remains unoxidized and thus is sandwiched between electrically insulating AlyGa1-yAs native oxide layers. The thresholds for photopumped 300 K continuous laser operation of the as-grown and oxide-embedded QWHs are approximately equal after differences in the Ar+-laser photopumping efficiencies are considered.

引用

页码：797 / 801

页数：5

共 7 条

[1] NATIVE-OXIDE STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].