RADIOGENIC SN DEFECTS IN ION-IMPLANTED INP

被引：14
|
作者：
DAMGAARD, S [1 ]
PETERSEN, JW [1 ]
WEYER, G [1 ]
机构：
[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 07期
关键词：
D O I：
10.1088/0022-3719/14/7/005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：993 / 1000
页数：8
相关论文
共 50 条
  • [1] RADIOGENIC SN DEFECTS IN ION-IMPLANTED CDTE
    GRANN, H
    PEDERSEN, FT
    WEYER, G
    HYPERFINE INTERACTIONS, 1986, 29 (1-4): : 1237 - 1240
  • [2] LATTICE LOCATION AND ELECTRICAL-ACTIVITY OF ION-IMPLANTED SN IN INP
    KRINGHOJ, P
    WEYER, G
    APPLIED PHYSICS LETTERS, 1993, 62 (16) : 1973 - 1975
  • [3] DEFECT RECOVERY OF ION-IMPLANTED INP
    WEYER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 315 - 318
  • [4] ELECTROCHEMICAL PROFILING OF ION-IMPLANTED INP
    BAHIR, G
    MERZ, JL
    ABELSON, JR
    SIGMON, TW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) : 2187 - 2193
  • [5] Mechanisms for the activation of ion-implanted Fe in InP
    Cesca, T.
    Verna, A.
    Mattei, G.
    Gasparotto, A.
    Fraboni, B.
    Impellizzeri, G.
    Priolo, F.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [6] FULLY ION-IMPLANTED INP JUNCTION FETS
    BOOS, JB
    DIETRICH, HB
    WENG, TH
    SLEGER, KJ
    BINARI, SC
    HENRY, RL
    ELECTRON DEVICE LETTERS, 1982, 3 (09): : 256 - 258
  • [7] Ion-implanted InP for ultrafast photodetector applications
    Carmody, C
    Boudinov, H
    Tan, HH
    Jagadish, C
    Dao, LV
    Gal, M
    COMMAD 2000 PROCEEDINGS, 2000, : 153 - 156
  • [8] ELECTROCHEMICAL PROFILING OF ION-IMPLANTED InP.
    Bahir, G.
    Merz, J.L.
    Abelson, J.R.
    Sigmon, T.W.
    1600, (l34):
  • [9] ANNEALING BEHAVIOR OF ION-IMPLANTED FE IN INP
    SCHWARZ, SA
    SCHWARTZ, B
    SHENG, TT
    SINGH, S
    TELL, B
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1698 - 1700
  • [10] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP
    KENNEDY, EF
    APPLIED PHYSICS LETTERS, 1981, 38 (05) : 375 - 377
12345