Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study

被引：0

作者：

Sicre, Mathieu ^{[1
,2
,3
]}

Agnew, Megan ^{[4
]}

Buj, Christel ^{[1
,3
]}

Coignus, Jean ^{[3
]}

Golanski, Dominique ^{[1
]}

Helleboid, Remi ^{[1
]}

Mamdy, Bastien ^{[1
]}

Nicholson, Isobel ^{[4
]}

Pellegrini, Sara ^{[4
]}

Rideau, Denis ^{[1
]}

Roy, David ^{[1
]}

Calmon, Francis ^{[2
]}

机构：

[1] STMicroelectronics, TR&D, Crolles, France

[2] Univ Lyon, UMR CNRS 5270, INSA Lyon, INL, Villeurbanne, France

[3] Univ Grenoble Alpes, LETI, CEA, Grenoble, France

[4] STMicroelectronics, Imaging Div, Edinburgh, Midlothian, Scotland

来源：

IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) | 2021年

关键词：

Single-Photon Avalanche Diode; breakdown probability; Dark Count Rate; defects; Technology Computer-Aided Design;

D O I：

10.1109/ESSDERC53440.2021.9631797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dark Count Rate (DCR) in Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor technology is characterized and analyzed with a comprehensive simulation methodology. Based on a series of measurements of SPAD with various architectures, on an extended range of voltages and temperatures, the DCR measurements are correlated to the spatial localization of traps within the device and their parameters. To this aim, process and electrical simulations using Technology Computer-Aided Design (TCAD) tools are combined with an in-house McIntyre solver to compute the breakdown probability (P-t). The traps are accounted for using thermal SRH carrier generation-recombination mechanism which is coupled with the position-dependent breakdown probability. This rigorous methodology makes it possible to directly compare with DCR measurements, since only generated carriers with a non-negligible breakdown probability are considered.

引用

页码：143 / 146

页数：4

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