OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILM

被引：88
|
作者：
UNAGAMI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 02期
关键词：
D O I：
10.1143/JJAP.19.231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：231 / 241
页数：11
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