OXIDATION OF POROUS SILICON AND PROPERTIES OF ITS OXIDE FILM

被引：88

作者：

UNAGAMI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 02期

关键词：

D O I：

10.1143/JJAP.19.231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：231 / 241

页数：11

共 12 条

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[10]

UNAGAMI T, UNPUBLISHED

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