A STUDY OF THE COLLECTOR EMITTER OFFSET VOLTAGE OF INAIAS/INGAAS AND AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0

作者：

LIOU, JJ

机构：

[1] Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 04期

关键词：

D O I：

10.1088/0268-1242/5/4/015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The collector-emitter offset voltage VCE,offset of heterojunction bipolar transistors (HBTS) stems mainly from the asymmetry between the emitter and collector junctions in such devices. Based on device physics, they have developed analytical models for predicting V CE,offset of InAlAs/InGaAs and AlGaAs/GaAs single and double heterojunction bipolar transistors (SHBTS and DHBTS). Reasonable agreement is found when the present models are compared with data taken from InAlAs/InGaAs SHBTS and DHBTS grown by molecular beam epitaxy. Comparisons between the offset voltages of InAlAs/InGaAs and AlGaAs/GaAs HBTS are also included.

引用

页码：355 / 357

页数：3

共 8 条

[1]

Adachi S, J. Appl. Phys., 53, 12, pp. 8775-8792, (1982)

[2]

Adachi S, J. Appl. Phys., 58

[3]

Asbeck PM, Et al., Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits, IEEE Transactions on Electron Devices, 34, 12, pp. 2571-2579, (1987)

[4]

Chand N, Fisher R, Morkoc H, Appl. Phys. Lett., 47, 3, pp. 313-315, (1985)

[5]

Hayes JR, Gossard AC, Wiegmann W, Electron. Lett., 20, 19, pp. 766-767, (1984)

[6]

Sibille A, Palmier JF, Azoulay R, Esnault JC, J. Appl. Phys., 66, 1, pp. 442-444, (1989)

[7]

Su SL, Fischer R, Lyons WG, Tejayadi O, Arnold D, Klem J, Morkoc H, J. Appl. Phys., 54, 11, pp. 6725-6731, (1983)

[8]

Won T, Iyer S, Agarwala S, Morkoc H, IEEE Electron Device Lett., 10, 6, pp. 274-276, (1989)

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