APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS

被引：24
作者：
AHMED, NAG
CHRISTODOULIDES, CE
CARTER, G
NOBES, MJ
TITOV, AI
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS | 1980年 / 168卷 / 1-3期
关键词：
D O I：
10.1016/0029-554X(80)91266-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
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页码：283 / 288
页数：6
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