G-TENSOR OF THE INTERSTITIAL OXYGEN AND THE BROKEN SI-O BOND IN SILICON DIOXIDE - MO MODEL CALCULATION

被引：2
|
作者：
HABERLANDT, H
WECKNER, HJ
GOBSCH, G
REINHOLD, J
机构：
[1] TECH HSCH ILMENAU,TECH ELEKTR BAUELEMENTE,DDR-63 ILMENAU,GER DEM REP
[2] KARL MARX UNIV,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 93卷 / 01期
关键词：
D O I：
10.1002/pssb.2220930169
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K71 / K75
页数：5
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